Specification
PackageBulk
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)600mOhm @ 3A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs20 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)550 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature49W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
13914
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.24 | |
10 | 0.2352 | |
100 | 0.228 | |
1000 | 0.2208 | |
10000 | 0.2112 |