Specification
PackageBulk
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C3.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.5Ohm @ 1.8A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs19 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)540 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature38W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
10482
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.3569 | |
10 | 0.3498 | |
100 | 0.3391 | |
1000 | 0.3283 | |
10000 | 0.3141 |