Specification
PackageBulk
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C5.3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)500mOhm @ 2.7A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs±30V
Vgs(th)(Max)@Id350 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds24W (Tc)
FETFeature-55°C ~ 175°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-220F
MountingTypeTO-220-3 Full Pack
SupplierDevicePackage11 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6060
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.2457 | |
10 | 0.2408 | |
100 | 0.2334 | |
1000 | 0.226 | |
10000 | 0.2162 |