SI4463DY
Part NoSI4463DY
Manufactureronsemi
DescriptionP-CHANNEL MOSFET
Datasheet
Download Now!
ECAD Module
Specification
PackageBulk
SeriesPowerTrench®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)11.5A (Ta)
Current-ContinuousDrain(Id)@25°C2.5V, 4.5V
DriveVoltage(MaxRdsOn12mOhm @ 11.5A, 4.5V
MinRdsOn)1.5V @ 250µA
RdsOn(Max)@Id±12V
Vgs-
Vgs(th)(Max)@Id1W (Ta)
Vgs(Max)-55°C ~ 150°C (TJ)
InputCapacitance(Ciss)(Max)@VdsSurface Mount
FETFeature8-SOIC
PowerDissipation(Max)8-SOIC (0.154, 3.90mm Width)
OperatingTemperature20 V
MountingType60 nC @ 4.5 V
SupplierDevicePackage4481 pF @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
15088
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8855 | |
| 10 | 0.8678 | |
| 100 | 0.8412 | |
| 1000 | 0.8147 | |
| 10000 | 0.7792 |
Associated Product
