SI4835DY
Part NoSI4835DY
Manufactureronsemi
DescriptionP-CHANNEL MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesPowerTrench®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C8.8A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)20mOhm @ 8.8A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs±25V
Vgs(th)(Max)@Id1680 pF @ 15 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds1W (Ta)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature8-SOIC
MountingType8-SOIC (0.154, 3.90mm Width)
SupplierDevicePackage27 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
15541
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.2241 | |
| 10 | 0.2196 | |
| 100 | 0.2129 | |
| 1000 | 0.2062 | |
| 10000 | 0.1972 |
Associated Product
