SSP1N50B
Part NoSSP1N50B
Manufactureronsemi
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)520 V
Current-ContinuousDrain(Id)@25°C1.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)5.3Ohm @ 750mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs11 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)340 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature36W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7482
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.2871 | |
| 10 | 0.2814 | |
| 100 | 0.2727 | |
| 1000 | 0.2641 | |
| 10000 | 0.2526 |
Associated Product
