SSP1N60A
Part NoSSP1N60A
Manufactureronsemi
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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Specification
PackageBulk
Series-
ProductStatusActive
FETTypeMOSFET (Metal Oxide)
Technology-
DraintoSourceVoltage(Vdss)N-Channel
Current-ContinuousDrain(Id)@25°C600 V
DriveVoltage(MaxRdsOn1A (Tc)
MinRdsOn)10V
RdsOn(Max)@Id12Ohm @ 500mA, 10V
Vgs4V @ 250µA
Vgs(th)(Max)@Id11 nC @ 10 V
Vgs(Max)±30V
InputCapacitance(Ciss)(Max)@Vds190 pF @ 25 V
FETFeature34W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
10958
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.1155 | |
10 | 0.1132 | |
100 | 0.1097 | |
1000 | 0.1063 | |
10000 | 0.1016 |