GPI65030TO5L
Part NoGPI65030TO5L
ManufacturerGaNPower
DescriptionGaNFET N-CH 650V 30A TO263-5L
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyGaNFET (Gallium Nitride)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C30A
DriveVoltage(MaxRdsOn6V
MinRdsOn)-
RdsOn(Max)@Id1.4V @ 3.5mA
Vgs5.8 nC @ 6 V
Vgs(th)(Max)@Id+7.5V, -12V
Vgs(Max)241 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType-
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
14947
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 12.9 | |
| 10 | 12.642 | |
| 100 | 12.255 | |
| 1000 | 11.868 | |
| 10000 | 11.352 |
Associated Product
