GPIHV5DK
Part NoGPIHV5DK
ManufacturerGaNPower
DescriptionGaNFET N-CH 1200V 5A TO252
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
Series-
Product StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C5A
Drive Voltage (Max Rds On, Min Rds On)6V
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id1.7V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs1.9 nC @ 6 V
Vgs (Max)+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds90 pF @ 700 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package-
Package / Case-
Grade-
Qualification-
In Stock:
2841
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Associated Product
