G2R1000MT17J-TR
Part NoG2R1000MT17J-TR
ManufacturerGeneSiC Semiconductor
Description1700V 1000M TO-263-7 G2R SIC MOS
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesG2R™, LoRing™
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1700 V
Current-ContinuousDrain(Id)@25°C5A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)1.2Ohm @ 2A, 20V
RdsOn(Max)@Id4V @ 2mA
Vgs11 nC @ 20 V
Vgs(th)(Max)@Id+20V, -5V
Vgs(Max)139 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature44W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263-7
SupplierDevicePackageTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
23353
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.9552 | |
| 10 | 6.8161 | |
| 100 | 6.6074 | |
| 1000 | 6.3988 | |
| 10000 | 6.1206 |
Associated Product
