G3R12MT12K
Part NoG3R12MT12K
ManufacturerGeneSiC Semiconductor
Description1200V 12M TO-247-4 G3R SIC MOSFE
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C157A (Tc)
DriveVoltage(MaxRdsOn15V, 18V
MinRdsOn)13mOhm @ 100A, 18V
RdsOn(Max)@Id2.7V @ 50mA
Vgs288 nC @ 15 V
Vgs(th)(Max)@Id+22V, -10V
Vgs(Max)9335 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature567W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-4
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
15215
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 68.211 | |
| 10 | 66.8468 | |
| 100 | 64.8004 | |
| 1000 | 62.7541 | |
| 10000 | 60.0257 |
Associated Product
