G3R160MT12D
Part NoG3R160MT12D
ManufacturerGeneSiC Semiconductor
DescriptionSIC MOSFET N-CH 22A TO247-3
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
SeriesG3R™
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C22A (Tc)
DriveVoltage(MaxRdsOn15V
MinRdsOn)192mOhm @ 10A, 15V
RdsOn(Max)@Id2.69V @ 5mA
Vgs28 nC @ 15 V
Vgs(th)(Max)@Id±15V
Vgs(Max)730 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature123W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-3
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2732
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.0636 | |
| 10 | 5.9423 | |
| 100 | 5.7604 | |
| 1000 | 5.5785 | |
| 10000 | 5.336 |
Associated Product
