G3R160MT12J-TR
Part NoG3R160MT12J-TR
ManufacturerGeneSiC Semiconductor
Description1200V 160M TO-263-7 G3R SIC MOSF
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesG3R™, LoRing™
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C19A (Tc)
DriveVoltage(MaxRdsOn15V, 18V
MinRdsOn)180mOhm @ 10A, 18V
RdsOn(Max)@Id2.7V @ 5mA
Vgs23 nC @ 15 V
Vgs(th)(Max)@Id+22V, -10V
Vgs(Max)724 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature110W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263-7
SupplierDevicePackageTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
22916
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 8.2038 | |
| 10 | 8.0397 | |
| 100 | 7.7936 | |
| 1000 | 7.5475 | |
| 10000 | 7.2193 |
Associated Product
