G3R30MT12J-TR
Part NoG3R30MT12J-TR
ManufacturerGeneSiC Semiconductor
Description1200V 30M TO-263-7 G3R SIC MOSFE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesG3R™, LoRing™
ProductStatusActive
FETTypeSiC (Silicon Carbide Junction Transistor)
Technology-
DraintoSourceVoltage(Vdss)N-Channel
Current-ContinuousDrain(Id)@25°C1200 V
DriveVoltage(MaxRdsOn85A (Tc)
MinRdsOn)15V, 18V
RdsOn(Max)@Id34mOhm @ 45A, 18V
Vgs2.7V @ 24mA
Vgs(th)(Max)@Id118 nC @ 15 V
Vgs(Max)+22V, -10V
InputCapacitance(Ciss)(Max)@Vds3863 pF @ 800 V
FETFeature408W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CaseTO-263-7
GateCharge(Qg)(Max)@VgsTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Grade
Qualification
In Stock:
16081
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 19.1772 | |
| 10 | 18.7937 | |
| 100 | 18.2183 | |
| 1000 | 17.643 | |
| 10000 | 16.8759 |
Associated Product
