G3R45MT17K
Part NoG3R45MT17K
ManufacturerGeneSiC Semiconductor
DescriptionSIC MOSFET N-CH 61A TO247-4
Datasheet
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ECAD Module
Specification
PackageTube
SeriesG3R™
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1700 V
Current-ContinuousDrain(Id)@25°C61A (Tc)
DriveVoltage(MaxRdsOn15V
MinRdsOn)58mOhm @ 40A, 15V
RdsOn(Max)@Id2.7V @ 8mA
Vgs182 nC @ 15 V
Vgs(th)(Max)@Id±15V
Vgs(Max)4523 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature438W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-4
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4160
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 35.3849 | |
| 10 | 34.6772 | |
| 100 | 33.6157 | |
| 1000 | 32.5541 | |
| 10000 | 31.1387 |
Associated Product
