GA04JT17-247
Part NoGA04JT17-247
ManufacturerGeneSiC Semiconductor
DescriptionTRANS SJT 1700V 4A TO247AB
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETType-
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1700 V
Current-ContinuousDrain(Id)@25°C4A (Tc) (95°C)
DriveVoltage(MaxRdsOn-
MinRdsOn)480mOhm @ 4A
RdsOn(Max)@Id-
Vgs-
Vgs(th)(Max)@Id-
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature106W (Tc)
PowerDissipation(Max)175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247AB
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7242
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Associated Product
