GA100JT12-227
Part NoGA100JT12-227
ManufacturerGeneSiC Semiconductor
DescriptionTRANS SJT 1200V 160A SOT227
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETType-
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C160A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)10mOhm @ 100A
RdsOn(Max)@Id-
Vgs-
Vgs(th)(Max)@Id-
Vgs(Max)14400 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature535W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSOT-227
SupplierDevicePackageSOT-227-4, miniBLOC
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2832
Pricing
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Associated Product
