GA10SICP12-263
Part NoGA10SICP12-263
ManufacturerGeneSiC Semiconductor
DescriptionTRANS SJT 1200V 25A D2PAK
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETType-
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C25A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)100mOhm @ 10A
RdsOn(Max)@Id-
Vgs-
Vgs(th)(Max)@Id-
Vgs(Max)1403 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature170W (Tc)
PowerDissipation(Max)175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263-7
SupplierDevicePackageTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
3103
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 28.0497 | |
| 10 | 27.4887 | |
| 100 | 26.6472 | |
| 1000 | 25.8057 | |
| 10000 | 24.6837 |
Associated Product
