GA50JT06-258
Part NoGA50JT06-258
ManufacturerGeneSiC Semiconductor
DescriptionTRANS SJT 600V 100A TO258
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETType-
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C100A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)25mOhm @ 50A
RdsOn(Max)@Id-
Vgs-
Vgs(th)(Max)@Id-
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature769W (Tc)
PowerDissipation(Max)-55°C ~ 225°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-258
SupplierDevicePackageTO-258-3, TO-258AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3419
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 507.6795 | |
| 10 | 497.5259 | |
| 100 | 482.2955 | |
| 1000 | 467.0651 | |
| 10000 | 446.758 |
Associated Product
