GA50JT12-247

Part NoGA50JT12-247

ManufacturerGeneSiC Semiconductor

DescriptionTRANS SJT 1200V 100A TO247AB

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Specification

PackageTube

Series-

ProductStatusObsolete

FETType-

TechnologySiC (Silicon Carbide Junction Transistor)

DraintoSourceVoltage(Vdss)1200 V

Current-ContinuousDrain(Id)@25°C100A (Tc)

DriveVoltage(MaxRdsOn-

MinRdsOn)25mOhm @ 50A

RdsOn(Max)@Id-

Vgs-

Vgs(th)(Max)@Id-

Vgs(Max)583W (Tc)

InputCapacitance(Ciss)(Max)@Vds175°C (TJ)

FETFeatureThrough Hole

PowerDissipation(Max)TO-247AB

OperatingTemperatureTO-247-3

MountingType-

SupplierDevicePackage7209 pF @ 800 V

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

In Stock: 4824
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