GP1M003A080CH
Part NoGP1M003A080CH
ManufacturerGlobal Power Technologies Group
DescriptionMOSFET N-CH 800V 3A DPAK
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-252, (D-Pak)
Series-
Rds On (Max) @ Id, Vgs4.2 Ohm @ 1.5A, 10V
Power Dissipation (Max)94W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other Names1560-1155-2
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds696pF @ 25V
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)800V
Detailed DescriptionN-Channel 800V 3A (Tc) 94W (Tc) Surface Mount TO-252, (D-Pak)
Current - Continuous Drain (Id) @ 25°C3A (Tc)
In Stock:
5723
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