18N20F
Part No18N20F
ManufacturerGoford Semiconductor
DescriptionN200V, 18A,RD<0.19@10V,VTH1.0V~3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C18A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)190mOhm @ 9A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs17.7 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)836 pF @ 25 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature110W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220F
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3568
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4444 | |
| 10 | 0.4355 | |
| 100 | 0.4222 | |
| 1000 | 0.4088 | |
| 10000 | 0.3911 |
Associated Product
