18N20J
Part No18N20J
ManufacturerGoford Semiconductor
DescriptionN200V, 18A,RD<0.16@10V,VTH1V~3V,
Datasheet
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ECAD Module
Specification
Package1
SeriesTube
ProductStatusTrenchFET®
FETTypeActive
TechnologyN-Channel
DraintoSourceVoltage(Vdss)MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C200 V
DriveVoltage(MaxRdsOn18A (Tc)
MinRdsOn)10V
RdsOn(Max)@Id160mOhm @ 9A, 10V
Vgs3V @ 250µA
Vgs(th)(Max)@Id17.7 nC @ 10 V
Vgs(Max)±30V
InputCapacitance(Ciss)(Max)@Vds836 pF @ 25 V
FETFeatureStandard
PowerDissipation(Max)65.8W (Tc)
OperatingTemperature-55°C ~ 150°C (TJ)
MountingType-
SupplierDevicePackage-
Package/CaseThrough Hole
GateCharge(Qg)(Max)@VgsTO-251
GradeTO-251-3 Short Leads, IPak, TO-251AA
Qualification
In Stock:
21993
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 94.77 | |
| 10 | 92.8746 | |
| 100 | 90.0315 | |
| 1000 | 87.1884 | |
| 10000 | 83.3976 |
Associated Product
