20N06
Part No20N06
ManufacturerGoford Semiconductor
DescriptionN60V,25A,RD<24M@10V,VTH1.0V~2.5V
Datasheet
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Specification
PackageTape & Reel (TR)
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C25A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)24mOhm @ 20A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs±20V
Vgs(th)(Max)@Id1609 pF @ 30 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds41W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperatureTO-252
MountingTypeTO-252-3, DPak (2 Leads + Tab), SC-63
SupplierDevicePackage25 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
17208
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.1548 | |
10 | 0.1517 | |
100 | 0.1471 | |
1000 | 0.1424 | |
10000 | 0.1362 |