G080N10M
Part NoG080N10M
ManufacturerGoford Semiconductor
DescriptionMOSFET N-CH 100V 180A TO-263
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C180A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)7.5mOhm @ 30A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs107 nC @ 4.5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)13950 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature370W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
22375
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.528 | |
| 10 | 1.4974 | |
| 100 | 1.4516 | |
| 1000 | 1.4058 | |
| 10000 | 1.3446 |
Associated Product
