G10N06
Part NoG10N06
ManufacturerGoford Semiconductor
DescriptionN60V,10A,RD<16M@10V,VTH1.2V~2.2V
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)16mOhm @ 9A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs58 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2180 pF @ 30 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.6W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOP
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3955
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.1701 | |
| 10 | 0.1667 | |
| 100 | 0.1616 | |
| 1000 | 0.1565 | |
| 10000 | 0.1497 |
Associated Product
