G15N10C
Part NoG15N10C
ManufacturerGoford Semiconductor
DescriptionN100V,RD(MAX)<110M@10V,RD(MAX)<1
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C22A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)90mOhm @ 8A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs22 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature55W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-252
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6923
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.1652 | |
| 10 | 0.1619 | |
| 100 | 0.1569 | |
| 1000 | 0.152 | |
| 10000 | 0.1454 |
Associated Product
