G1K3N10G
Part NoG1K3N10G
ManufacturerGoford Semiconductor
DescriptionN100V, 5A,RD<130M@10V,VTH1V~2V,
Datasheet
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ECAD Module
Specification
Package1
SeriesTape & Reel (TR),Cut Tape (CT),Digi-Reel®
ProductStatusTrenchFET®
FETTypeActive
TechnologyN-Channel
DraintoSourceVoltage(Vdss)MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C100 V
DriveVoltage(MaxRdsOn5A (Tc)
MinRdsOn)4.5V, 10V
RdsOn(Max)@Id130mOhm @ 5A, 10V
Vgs2V @ 250µA
Vgs(th)(Max)@Id20 nC @ 10 V
Vgs(Max)±20V
InputCapacitance(Ciss)(Max)@Vds644 pF @ 50 V
FETFeatureStandard
PowerDissipation(Max)1.5W (Tc)
OperatingTemperature-55°C ~ 150°C (TJ)
MountingTypeSurface Mount
SupplierDevicePackageSOT-89
Package/CaseTO-243AA
GateCharge(Qg)(Max)@Vgs-
Grade-
Qualification
In Stock:
14329
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.088 | |
| 10 | 0.0862 | |
| 100 | 0.0836 | |
| 1000 | 0.081 | |
| 10000 | 0.0774 |
Associated Product
