G2002A
Part NoG2002A
ManufacturerGoford Semiconductor
DescriptionN200V, 2A,RD<540M@10V,VTH1.0V~3.
Datasheet
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C2A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)540mOhm @ 1A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs16 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)733 pF @ 100 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature2.5W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-6L
SupplierDevicePackageSOT-23-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5215
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.0963 | |
10 | 0.0944 | |
100 | 0.0915 | |
1000 | 0.0886 | |
10000 | 0.0847 |