G58N06F
RoHS

G58N06F

Part NoG58N06F
ManufacturerGoford Semiconductor
DescriptionMOSFET N-CH 60V 35A TO-220F
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ECAD Module G58N06F
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Specification
PackageTube
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C35A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)13mOhm @ 30A, 10V
RdsOn(Max)@Id2.4V @ 250µA
Vgs75 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)30006 pF @ 30 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature44W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220F
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 15201
Pricing
QTY UNIT PRICE EXT PRICE
1 0.9409
10 0.9221
100 0.8939
1000 0.8656
10000 0.828
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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