G60N10T
Part NoG60N10T
ManufacturerGoford Semiconductor
DescriptionN100V,RD(MAX)<25M@10V,RD(MAX)<30
Datasheet
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ECAD Module
Specification
PackageTube
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C60A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)17mOhm @ 20A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs146 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3970 pF @ 50 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature132W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
20500
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.3916 | |
| 10 | 0.3838 | |
| 100 | 0.372 | |
| 1000 | 0.3603 | |
| 10000 | 0.3446 |
Associated Product
