G700P06J
Part NoG700P06J
ManufacturerGoford Semiconductor
DescriptionP-60V,-23A,RD(MAX)<70M@-10V,VTH-
Datasheet
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ECAD Module
Specification
PackageTube
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C23A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)70mOhm @ 6A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs23 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1465 pF @ 30 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature50W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-251
GateCharge(Qg)(Max)@VgsTO-251-3 Short Leads, IPak, TO-251AA
Grade
Qualification
In Stock:
8953
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.1534 | |
| 10 | 0.1503 | |
| 100 | 0.1457 | |
| 1000 | 0.1411 | |
| 10000 | 0.135 |
Associated Product
