GC11N65M
Part NoGC11N65M
ManufacturerGoford Semiconductor
DescriptionMOSFET N-CH 650V 11A TO-263
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesCool MOS™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C11A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)360mOhm @ 5.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs21 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)768 pF @ 50 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature78W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7427
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8051 | |
| 10 | 0.789 | |
| 100 | 0.7648 | |
| 1000 | 0.7407 | |
| 10000 | 0.7085 |
Associated Product
