GC11N65T
Part NoGC11N65T
ManufacturerGoford Semiconductor
DescriptionN650V,RD(MAX)<360M@10V,VTH2.5V~4
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCool MOS™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C11A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)360mOhm @ 5.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs21 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)901 pF @ 50 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature192W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4884
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3284 | |
| 10 | 1.3018 | |
| 100 | 1.262 | |
| 1000 | 1.2221 | |
| 10000 | 1.169 |
Associated Product
