GC20N65T
Part NoGC20N65T
ManufacturerGoford Semiconductor
DescriptionN650V,RD(MAX)<170M@10V,VTH2.5V~4
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCool MOS™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C20A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)170mOhm @ 10A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs39 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1724 pF @ 100 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature151W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-220
GateCharge(Qg)(Max)@VgsTO-220-3
Grade
Qualification
In Stock:
8798
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1223 | |
| 10 | 1.0999 | |
| 100 | 1.0662 | |
| 1000 | 1.0325 | |
| 10000 | 0.9876 |
Associated Product
