GS120R045Q4
Part NoGS120R045Q4
ManufacturerGoford Semiconductor
DescriptionSiC MOSFET N-CH 1200V 60A TO-24
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeSiCFET (Silicon Carbide)
Technology-
DraintoSourceVoltage(Vdss)N-Channel
Current-ContinuousDrain(Id)@25°C1200 V
DriveVoltage(MaxRdsOn60A (Tc)
MinRdsOn)18V
RdsOn(Max)@Id52mOhm @ 20A, 18V
Vgs4V @ 10mA
Vgs(th)(Max)@Id-
Vgs(Max)-10V, +20V
InputCapacitance(Ciss)(Max)@Vds2565 pF @ 1000 V
FETFeature395W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-247-4L
GateCharge(Qg)(Max)@VgsTO-247-4
Grade
Qualification
In Stock:
3548
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 24.1472 | |
| 10 | 23.6643 | |
| 100 | 22.9398 | |
| 1000 | 22.2154 | |
| 10000 | 21.2495 |
Associated Product
