GT040N04TI
Part NoGT040N04TI
ManufacturerGoford Semiconductor
DescriptionN40V, 110A,RD<4M@10V,VTH1.0V~2.5
Datasheet
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ECAD Module
Specification
PackageTube
SeriesSGT
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)40 V
Current-ContinuousDrain(Id)@25°C110A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)4mOhm @ 10A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs50 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2303 pF @ 20 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature160W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6036
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.824 | |
| 10 | 0.8075 | |
| 100 | 0.7828 | |
| 1000 | 0.7581 | |
| 10000 | 0.7251 |
Associated Product
