GT042P06T
Part NoGT042P06T
ManufacturerGoford Semiconductor
DescriptionMOSFET, P-CH,-60V,-160A,RD(MAX)<
Datasheet
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Specification
PackageTube
SeriesSGT
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C160A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)4.5mOhm @ 15A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs305 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)9151 pF @ 30 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature280W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-220
GateCharge(Qg)(Max)@VgsTO-220-3
Grade
Qualification
In Stock:
12609
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 2.603 | |
10 | 2.5509 | |
100 | 2.4729 | |
1000 | 2.3948 | |
10000 | 2.2906 |