GT042P06T
RoHS

GT042P06T

Part NoGT042P06T
ManufacturerGoford Semiconductor
DescriptionMOSFET, P-CH,-60V,-160A,RD(MAX)<
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ECAD Module GT042P06T
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Specification
PackageTube
SeriesSGT
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C160A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)4.5mOhm @ 15A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs305 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)9151 pF @ 30 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature280W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-220
GateCharge(Qg)(Max)@VgsTO-220-3
Grade
Qualification
In Stock: 12609
Pricing
QTY UNIT PRICE EXT PRICE
1 2.603
10 2.5509
100 2.4729
1000 2.3948
10000 2.2906
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product