GT100N12M
Part NoGT100N12M
ManufacturerGoford Semiconductor
DescriptionN120V,RD(MAX)<10M@10V,VTH2.5V~3.
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesSGT
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)120 V
Current-ContinuousDrain(Id)@25°C70A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)10mOhm @ 35A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs50 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3050 pF @ 60 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature100W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5468
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6405 | |
| 10 | 0.6277 | |
| 100 | 0.6085 | |
| 1000 | 0.5893 | |
| 10000 | 0.5636 |
Associated Product
