GT105N10M
Part NoGT105N10M
ManufacturerGoford Semiconductor
DescriptionMOSFET N-CH 100V 60A 83W TO-263
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1675 pF @ 50 V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Grade-
Qualification-
In Stock:
800
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.17 | |
| 10 | 1.147 | |
| 100 | 1.11 | |
| 1000 | 1.08 | |
| 10000 | 1.03 |
Associated Product
