GT110N06S
Part NoGT110N06S
ManufacturerGoford Semiconductor
DescriptionN60V,RD(MAX)<15M@-4.5V,RD(MAX)<1
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesSGT
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C14A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)11mOhm @ 14A, 10V
RdsOn(Max)@Id2.4V @ 250µA
Vgs±20V
Vgs(th)(Max)@Id1300 pF @ 25 V
Vgs(Max)Standard
InputCapacitance(Ciss)(Max)@Vds3W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature8-SOP
MountingType8-SOIC (0.154, 3.90mm Width)
SupplierDevicePackage24 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
9101
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.2457 | |
| 10 | 0.2408 | |
| 100 | 0.2334 | |
| 1000 | 0.226 | |
| 10000 | 0.2162 |
Associated Product
