GT130N10F
Part NoGT130N10F
ManufacturerGoford Semiconductor
DescriptionMOSFET N-CH 100V 45A 41.7W TO-2
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C45A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)12mOhm @ 20A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs18 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1215 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature41.7W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220F
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
25197
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8448 | |
| 10 | 0.8279 | |
| 100 | 0.8026 | |
| 1000 | 0.7772 | |
| 10000 | 0.7434 |
Associated Product
