GT400P10T
Part NoGT400P10T
ManufacturerGoford Semiconductor
DescriptionMOSFET P-CH 100V 35A TO-220
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C35A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)35mOhm @ 10A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs41 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3223 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature106W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4175
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4779 | |
| 10 | 0.4683 | |
| 100 | 0.454 | |
| 1000 | 0.4397 | |
| 10000 | 0.4206 |
Associated Product
