GT52N10D5I
Part NoGT52N10D5I
ManufacturerGoford Semiconductor
DescriptionN100V,65A,RD<8M@10V,VTH1.0V~2.5V
Datasheet
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Specification
PackageTape & Reel (TR)
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C65A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)7.5mOhm @ 50A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs35 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2428 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature79W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-DFN (4.9x5.75)
SupplierDevicePackage8-PowerTDFN
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
9597
Pricing
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