GT700P08T
Part NoGT700P08T
ManufacturerGoford Semiconductor
DescriptionP-80V, -25A,RD<72M@-10V,VTH-2V~-
Datasheet
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ECAD Module
Specification
PackageTube
SeriesSGT
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)80 V
Current-ContinuousDrain(Id)@25°C25A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)72mOhm @ 2A, 10V
RdsOn(Max)@Id3.5V @ 250µA
Vgs75 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1639 pF @ 40 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
22261
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9765 | |
| 10 | 0.957 | |
| 100 | 0.9277 | |
| 1000 | 0.8984 | |
| 10000 | 0.8593 |
Associated Product
