GSFD9R706
RoHS

GSFD9R706

Part NoGSFD9R706
DescriptionMOSFET, N-CH, SINGLE, 60.00A, 60
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ECAD Module GSFD9R706
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Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9.7mOhm @ 13A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 400 V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252 (DPAK)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Grade-
Qualification-
In Stock: 4780
Pricing
QTY UNIT PRICE EXT PRICE
1 0.58
10 0.568
100 0.55
1000 0.53
10000 0.51
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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