GSFH9R015
RoHS

GSFH9R015

Part NoGSFH9R015
DescriptionMOSFET, N-CH, SINGLE, 100.00A, 1
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ECAD Module GSFH9R015
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Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C100A (Tj)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5870 pF @ 75 V
FET Feature-
Power Dissipation (Max)178W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
Grade-
Qualification-
In Stock: 996
Pricing
QTY UNIT PRICE EXT PRICE
1 2.26
10 2.215
100 2.15
1000 2.08
10000 1.99
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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