GSFT60R190
RoHS

GSFT60R190

Part NoGSFT60R190
DescriptionMOSFET, N-CH, SINGLE, 20.00A, 60
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ECAD Module GSFT60R190
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Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1174 pF @ 100 V
FET Feature-
Power Dissipation (Max)66W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D2PAK)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On)10V
Grade-
Qualification-
In Stock: 1600
Pricing
QTY UNIT PRICE EXT PRICE
1 1.98
10 1.94
100 1.88
1000 1.82
10000 1.74
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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