GSFU2016
RoHS

GSFU2016

Part NoGSFU2016
DescriptionMOSFET, N-CH, SINGLE, 18.00A, 20
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ECAD Module GSFU2016
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Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C18A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)160mOhm @ 9A, 10V
RdsOn(Max)@Id3.9V @ 250µA
Vgs41 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1108 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature50W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-220F
GateCharge(Qg)(Max)@VgsTO-220-3 Full Pack
Grade
Qualification
In Stock: 5012
Pricing
QTY UNIT PRICE EXT PRICE
1 0.8645
10 0.8472
100 0.8213
1000 0.7953
10000 0.7608
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product