GSJA65R041
RoHS

GSJA65R041

Part NoGSJA65R041
DescriptionMOSFET, N-CH, SINGLE, 70.00A, 65
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ECAD Module GSJA65R041
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Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs41mOhm @ 35A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs326 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds7132 pF @ 100 V
FET Feature-
Power Dissipation (Max)500W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3
Grade-
Qualification-
In Stock: 600
Pricing
QTY UNIT PRICE EXT PRICE
1 8.44
10 8.271
100 8.02
1000 7.76
10000 7.43
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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